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由EErben著作·2018·被引用6次—ThemetalgateforNMOStransistorsrequiresaworkfunctionclosetotheconductionbandofSi(∼4.1eV)andthePMOStransistorneedsametalgatewitha ...,由JRobertson著作·被引用728次—firstprocessfollowsthestandardprocessflow,butwithametalga...
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由JRobertson著作·被引用728次—firstprocessfollowsthestandardprocessflow,butwithametalgatereplacingthepoly-Sigate....gatefirstandgatelast(replacementgate,dummygate) ...
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